APM3055L Datasheet PDF learn more.
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- N-Channel Enhancement Mode Field Effect Transistor, 3055L datasheet, 3055L circuit, 3055L data sheet: CET, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Part number : APM3055L
Functions : This is a kind of semiconductor, N-Channel Enhancement Mode MOSFET.
Pin arrangement :
Package information :
Manufacturer : ANPEC
Image :
The texts in the PDF file :
APM3055L N-Channel Enhancement Mode MOSFET
Features
Pin
Description
• 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V • Super High Dense Cell Design • High Power and Current Handling Capability • TO-252 and SOT-223 Packages Applications • Switching Regulators • Switching Converters 123 GD S Top View of TO-252 1 23 G DS Top View of SOT-223 Ordering and Marking Information APM3055L AP M 3055L U /V : APM3055L XXXXX H andling C ode Temp. Range Package Code Package Code U : TO -252 V : SO T-223 O peration Junction Tem p. Range C : -55 to 150° C H andling C ode TR : Tape & Reel XXXXX – Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Rating 30 ±20 15 30 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.6 – Apr., 2002 1 www.anpec.com.tw APM3055L Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ Maximum Junction Temperature TSTG Storage Temperature Range TO-252 SOT-223 TO-252 SOT-223 Rating 50 3 20 1.2 150 -55 to 150 Unit W °C °C Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Static BVDSS IDSS VGS(th) IGSS RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VSD Diode Forward Voltage Dynamic Qg Qgs Qgd tON td(ON) tr td(OFF) tf tOFF Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Time Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-off Time Test Condition V [ … ]
APM3055L PDF File
Type Designator: TIP3055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W Welcome back.mr. macs virtual existence.
Maximum Collector-Base Voltage |Vcb|: 100 V
3055 Mosfet Board
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
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3055 Mosfet
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
TIP3055 Transistor Equivalent Substitute - Cross-Reference Search
TIP3055 Datasheet (PDF)
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Order this documentMOTOROLAby TIP3055/DSEMICONDUCTOR TECHNICAL DATANPNTIP3055Complementary Silicon PowerPNPTIP2955Transistors. . . designed for general purpose switching and ampli
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TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche
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TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell
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P3055 Mosfet
TIP3055NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGETIP2955 Series (TOP VIEW) 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwis
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AAA
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-
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INCHANGE Semiconductorisc Silicon NPN Power Transistor TIP3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type TIP2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose
3055 Mosfet Drive
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isc Silicon NPN Power Transistor TIP3055TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier
Datasheet: TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30, TIP3054, BC546, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F, TIP31, TIP31A.
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